Hoya Corporation (Tokyo, JP) inventor Shuzo Tokumitsu, in U.S. Patent 7,648,689, divulges an industrial scale wet process for “advantageously” producing nanometer indium phosphide (InP) particles efficiently in a short period of time and an InP fine particle dispersion. The InP nanocrystals are useful as a luminescence center for a light-emitting diode
Tokumitsu made diligent studies and as a result found that the nanometer indium phosphide can be produced by employing two or more indium compounds having specific properties and reacting them with a phosphorus compound in a Lewis base solvent.
The InP fine particle dispersion that is obtained by the above process and is excellent in dispersibility and stability against the passage of time.
The InP fine particles in the dispersion generally have an average particle size of 1 to 100 nm, preferably 2 to 10 nm, and they are “remarkably excellent in dispersibility,” says Tokumitsu. The InP fine particles can be surface-modified while maintaining the particle size. For example, they can be coated with other material. Further, the dispersibility can be controlled by changing a solvent that is coordinated on the surface.
The InP fine particles in the dispersion generally have an average particle size of 1 to 100 nm, preferably 2 to 10 nm, and they are “remarkably excellent in dispersibility,” says Tokumitsu. The InP fine particles can be surface-modified while maintaining the particle size. For example, they can be coated with other material. Further, the dispersibility can be controlled by changing a solvent that is coordinated on the surface.
