Translate

Showing posts with label nanofabrication market. Show all posts
Showing posts with label nanofabrication market. Show all posts

No Multi-Billion Dollar Fab Needed with Harvard License for Bottom-Up Semiconductor Assembly, Versatile Nano-Wire Makes Memory, LEDs and More


In United States Patent 7,595,260, Harvard College (Cambridge, MA)  Hyman Professor of Chemistry Charles M. Lieber with Yi Cui, Xiangfeng Duan and Yu Huang reveal bottom-up assembly of nanoscale electronic and optoelectronic devices including LEDs. The researchers demonstrated the ability to assemble active devices in the absence of multi-billion dollar fabrication lines which is of critical importance to the semiconductor and photonic fields and which they believe "augers well for the immediate and longer-term advances."

Lieber, Cui, Duan and Huang believe that the broad range of nanowire (NW) materials now available and the clearly defined ability to control their electronic properties will make possible nanoscale LEDs that cover the entire visible and near infrared range (e.g., GaN NWs for blue color). Such nanoscale light sources might be useful in creating new types of highly parallel optical sensors and for optical inter-connects in nanoelectronics. Moreover, the assembly of doped NW building blocks clearly has great potential for creating many other types of electronic devices and possibly even lasers.

With its extensive expertise in nanowire technologies, the laboratory of Charles Lieber has developed a novel high-performance memory device. Nonvolatile crossbar switches are memory elements created by crossing semiconductor and metal nanowires. Results have already shown bistable switching between ON and OFF states with ON/OFF ratios comparable to conventional devices (>104) and a well-defined, stable threshold voltage. Bit sizes are smaller than 20 nm by 20 nm, allowing for extremely high memory densities. 

Additionally, writes times of less than 100 nanoseconds have been demonstrated. Fully addressable memory arrays have been created exhibiting no cross-talk between individual elements, minimal degradation after thousands of cycles, and long memory retention times. In addition to operation on conventional substrates, the technology has been demonstrated on flexible plastic substrates, possibly allowing for low-cost manufacturing methods to be utilized for the creation of high-density, high-speed, stable and robust memory. The technology is available for licensing from the Harvard Office of Technology Development.

The microelectronics industry's continued success with scaling devices faces a number of physical limitations using current materials and device configurations. As demand surges for portable, high-density, low-cost memory, new technologies become increasingly attractive compared to the billion-dollar manufacturing requirements for conventional silicon. With revenues already in the tens of billions, memory for consumer electronics and PCs is a rapidly growing market demanding stable, robust, high-speed, and high-density technologies

The false-color scanning electron microscope image below is of Harvard zigzag nanowires in which the straight sections are separated by triangular joints and specific device functions are precisely localized at the kinked junctions in the nanowires


Image Credit: Harvard University, Bozhi Tian/Lieber Group


Taking nanomaterials to a new level of structural complexity,  Lieber's team has determined how to introduce kinks into arrow-straight nanowires, transforming them into zigzagging two- and three-dimensional structures with correspondingly advanced functions.  This work was described in October in a letter in the journal Nature Nanotechnology by scientists led by research assistant Bozhi Tian and Professor Lieber.

Among possible applications, the authors say, the new technology could foster a new nanoscale approach to detecting electrical currents in cells and tissues.  Nanowires for cancer detection have also been developed.  

Lieber and Tian’s approach involves the controlled introduction of triangular “stereocenters” – essentially, fixed 120-degree joints – into nanowires, structures that have previously been rigidly linear. These stereocenters, analogous to the chemical hubs found in many complex organic molecules, introduce kinks into 1-D nanostructures, transforming them into more complex forms. The researchers were able to introduce stereocenters as nanowires, which are self-assembled.

The researchers halted growth of the 1-D nanostructures for 15 seconds by removing key gaseous reactants from the chemical brew in which the process was taking place, replacing these reactants after joints had been introduced into the nanostructures. This approach resulted in a 40 percent yield of bent nanowires, which can then be purified to achieve higher yields. 

"The stereocenters appear as kinks, and the distance between kinks is completely controlled,” said Tian, a research assistant in Harvard’s Department of Chemistry and Chemical Biology. “Moreover, we demonstrated the generality of our approach through synthesis of 2-D silicon, germanium, and cadmium sulfide nanowire structures.”

The research by Lieber and Tian is the latest in the years-long efforts by scientists to control the composition and structure of nanowires during synthesis. Despite advances in these areas, the ability to control the design and growth of self-assembling nanostructures has been limited. Lieber and Tian’s work takes the formation of 2-D nanostructures a step further by enabling the introduction of electronic devices at the stereocenters.

“An important concept that emerged from these studies is that of introducing functionality at defined nanoscale points for the first time – in other words, nanodevices that can ‘self-label,’ ” Lieber said. “We illustrated this novel capability by the insertion of p–n diodes and field-effect transistors precisely at the stereocenters.”

Such self-labeled structures could open up the possibility of introducing nanoelectronics, photodetectors, or biological sensors into complex nanoscale structures.

Lieber and Tian’s co-authors are Ping Xie and Thomas J. Kempa of Harvard’s Department of Chemistry and Chemical Biology and David C. Bell of Harvard’s Center for Nanoscale Systems. Their work was funded by the National Institutes of Health, the McKnight Foundation, the MITRE Corp., and the National Science Foundation.

“We are very excited about the prospects this research opens up for nanotechnology,” has said Lieber, Mark Hyman Jr. Professor of Chemistry in Harvard’s Faculty of Arts and Sciences. “For example, our nanostructures make possible integration of active devices in nanoelectronic and photonic circuits, as well as totally new approaches for extra- and intracellular biological sensors. This latter area is one where we already have exciting new results, and one we believe can change the way much electrical recording in biology and medicine is carried out.”

In 2002, Professor Charles Lieber and his students have made nanowires that allowed Lieber's team to develop what is likely to be an important scientific tool, a coated wire capable of detecting low levels of a protein that marks the presence or recurrence of prostate cancer.




Nanofabrication Equipment, Materials and Wafers for Semiconductors, Electronics and Photonics Markets to Reach $111 Billion By 2014

Nanoscale lithographic apparatus are indispensible tools used to manufacture integrated circuits (ICs), flat panel displays, optoelectronic, sensors, microfluidic devices and photonic devices including solar power cells as well as micro-electromechanical systems (MEMS), all involving nanoscale structures. The advancement in photolithography technology has been the key to the rapid development of the semiconductor industry. Countless innovations and progress in this field will continue to drive technological development in the semiconductor industry. Nanofabrication equipment has been used to create integrated circuits in the 65nm to 45nm range, and companies are now moving to manufacturing computer chips and memory chips in the 32nm range.

According to a recently published report from iRAP, Inc., ET-110 Nanolithography Equipment for IT, Electronics and Photonics – A Technology, Industry and Global Market Analysis, the overall market for wafers, materials and nanofabrication equipment is expected to grow at 11% a year for the next five years, from an estimated $65.8 billion in 2009 to $111 billion in 2014.

In 2008, nanofabrication apparatus enabled semiconductor manufacturers to transform more than $11.4 billion worth of silicon wafer material into more than $425 billion worth of semiconductor, photonic, opto-electonic and MEMS material devices for use in computers and electronic devices, which in turn constituted a global market valued in excess of $1.38 trillion dollars, plus related services valued at $5 trillion dollars globally. Semiconductor and electronics manufacturers spent roughly $80 billion in 2007 and $74 billion in 2008 for silicon wafers, materials and equipment which allowed them to manufacture integrated circuits at scales to 45nm, and they are now beginning to buy equipment to manufacture integrated circuits at the scales of 32nm and 22nm.

The equipment for deposition of materials onto silicon wafers represented 19% of the nanofabrication market and was valued at $11.4 billion for 2008. Lithographic equipment was 20% of the market, valued at $12.4 billion. Beam technology and light sources associated with lithography and semiconductors represented 9% of the market and were valued at $5.594 billion. Testing of semiconductor components and processes represented 17% of the nanofabrication market with a value of $10.56 billion. Metrology was 11% of the 2008 market, with a value of $6.83 billion. Other processes were 6% of the 2008 market, with a value of $3.730 billion.

Companies involved in nanofabrication materials, apparatus, metrology and testing for the IT and electronics industry had sales in excess of $80 billion in 2007 and more than $73.5 billion in 2008, reflecting the worldwide economic downturn. Research and development (R&D) spending for improved nanofabrication techniques and equipment exceeds $7 billion a year at the corporate level. Research and development of manufacturing equipment for 45nm technology for semiconductors, which began in 2003, is now the manufacturing standard, and the new standard under development is 32nm architecture, beginning to be implemented in 2009. Each reduction in size results in more powerful microprocessors, memory chips and silicon-based solar power collectors, in which creates new demands. Lithography, including masks and resist, and associated metrology currently comprises 30% to 40% of the entire cost of semiconductor manufacturing. This fraction depends strongly on the product mix, volume of integrated circuits in demand per design, and age of equipment in the factory.

Market Value of Nanofabrication Equipment, Materials and Wafers for Semiconductors, Electronics and Photonics  through 2014



Source: iRAP, Inc.

Share of Nanofabrication Equipment, Materials and Wafers for Semiconductors, 2009-2014 



Source: iRAP, Inc


More details of the report are available from Innovative Research and Products (iRAP), Inc., visit www.innoresearch.net or contact iRAP at 203-569-790; or email at:

Data and analysis extracted from this press release must be accompanied by a statement identifying  iRAP, Inc., P.O. Box 16760, Stamford, CT 06905,  USA, Telephone: (203) 569-7909, Email: marketing@innoresearch.net as the source and publisher, along with report number, which can be found in the first paragraph of this release.  


M

Bruker Improves N8 TITANOS Atomic Force Microscope for Metrology and Nanofabrication


Bruker's N8 TITANOS Atomic Force Microscope (AFM) is capable of inspecting large wafers, for metrology on solar panels, photolithography masks, flat panel displays, etc.


Bruker Nano (Aachen, Germany) reports its N8 TITANOS™ large-sample inspection AFM has been further improved to provide highest spatial resolving power. Due to its unique AFM technology and outstanding mechanical stability, the TITANOS has now been demonstrated with atomic-scale resolution on HOPG (highly oriented pyrolythic graphite) on a production instrument in standard configuration. The TITANOS has proven itself once again as the most precise and stable AFM platform for large samples up to 300 mm diameter.

The N8 TITANOS has been developed for the inspection of 300 mm wafers, and it is also in use for metrology on solar panels, photolithography masks, flat panel displays, etc. The TITANOS’ ultra-precise xy-positioning stage employs contact-less linear motors, high-resolution glass encoders and an air bearing for fast, reproducible sample movement. The TITANOS AFM is mounted on a solid granite bridge above the platform.

All AFM systems offered by Bruker Nano employ Fiber Optic Interferometry (FOI) detection as a unique feature to achieve outstanding resolution even on large samples. “FOI provides superior sensitivity as well as a calibrated deflection,” explains Dr. Hans Achim Fuss, Bruker Nano’s AFM Chief Technology Officer. “The results obtained with our AFMs are highly reproducible due to the exact knowledge of all crucial parameters.”

Dr. Frank Saurenbach, Vice President for AFM at Bruker Nano commented further: “It is incredible to see the TITANOS’ stage move hundreds of millimeters in seconds, and then operate with such stability and record resolution at each new measuring position. We are excited to supply the large sample AFM tool with the highest resolving power available on the market”.

The N8 TITANOS can be used as a stand-alone, automated system or combined with a high-performance optical microscope. It comes as a fully accessible R&D tool, or can be upgraded to an at-line production inspection system.

Buker Nano is a business unit of the Bruker AXS division. For more information about Bruker Nano and Bruker Corporation (NASDAQ: BRKR), please visit www.bruker.com

Bruker Nano Business Marketing Communications Manager Stefan Langner, +49 (30) 670990-802 stefan.langner@bruker-axs.de


NanoInk Inc. Reaches Holy Land with Dip Pen Nanolithography® in PicoTech Deal

NanoInk Inc., innovators in the field of nanoscale fabrication techniques based on their patented Dip Pen Nanolithography® (DPN®), are expanding their presence in the Middle East and announced that they have signed a distribution agreement with PicoTech, who are based in Tel Aviv, Israel.

PicoTech is Israel's leading semiconductor, nanofabrication, process equipment and materials representative. With a team with over 20 years of experience, the company is respected as a stable and reliable partner to its customers, with a demonstrated ability to offer a superior product portfolio and support infrastructure. PicoTech offers its complete suite of sales and after sales support to manufacturers as their extension in Israel.

Nitzan Cafif, CEO of PicoTech, said, "We were interested in adding NanoInk's products and solutions to our portfolio as it helps us with our penetration into the growing biotech and associated markets. We have already received promising enquiries from the local market."

Tom Warwick, GM of Europe and Middle East of NanoInk, said, "I am impressed with PicoTech's interest and dedication. They have already invested in factory training for their principle sales engineer. We have high expectations for a strong partnership together -- the Israeli high tech market, always an early adopter of cutting edge technology, has been looking for solutions in the area of nanofabrication."

To learn more about NanoInk, DPN, its application and instrumentation platforms, please visit www.nanoink.net. For PicoTech, contact info@picotech.co.il.

$85 Billion Nanofabrication Equipment and Materials Market Supports $6.3 Trillion in Economic Activity


The figure portrays how $85 billion in equipment and materials purchased by semiconductor and microelectronic manufacturers in 2007 supported more than $6.3 trillion dollars in worldwide economic activity made possible through the production of semiconductor computer chips with transistors manufactured at nanoscales since 2001. Equipment for fabricating millions of nanosized transistors in silicon chips which enable modern computers, communications and are found in all modern automobiles, aviation and aerospace equipment.  Source: Draft ENIAC Multi-Annual Strategic Plan and Research Agenda 2010 (MASP) proposed by the Aeneas (Association of European Nanoelectronics Activities).   

Micro/Nanoelectronics have become integral to life and work – and the trend is ever upward.  One "Grand Challenge" identified in the Strategic Plan is  the development of  extreme ultraviolate (EUV) lithography  and complementary 1Xnm patterning as a chip mass manufacturing technology of the next decade. 

Technology: Extreme Ultra-Violet (EUV) lithography is anticipated to become the key enabler for More Moore chip mass manufacturing beginning at 22nm feature sizes (half-pitch). Major technology solutions need to be developed: a high throughput EUV machine including e.g. high-power EUV sources and optics for high quality imaging at 13.5nm wavelength; EUV infrastructure and metrology including mask fabrication processes, cleaning, inspection and review tools, sensitive resists, defect engineering and process control. Furthermore, the development of complementary 1Xnm patterning technologies as e.g. e-beam lithography is required for mask making, fast prototyping and low-volume manufacturing.  

Commercial Market: EUV lithography addresses a large market with an estimated annual market of $4.5 billion (€3 billion) in 2015. European upfront investments in EUV lithography exceeds $1.5 (€1) billion . The substantial markets for the EUV infrastructure and complementary 1Xnm patterning technologies are additional. It is important to note that Europe’s leading role achieved in the 193nm immersion lithography can only be sustained by a successful introduction of EUV lithography, states the Strategic Plan.  

EU Funding Rationale: The high risk in the huge upfront investment and the long-term vision of re-establishing EUV lithography and infrastructure require public funding to realize the multi-billion dollar market potential over the next decade. Furthermore,ENIAC funding will allow Europe to gain in-depth knowledge of leading edge semiconductor manufacturing all over the world and to create and sustained employment of highly qualified individuals in Europe. 

ENIAC: The development of EUV lithography and infrastructure, as well as, the complementary 1Xnm patterning technologies are highly involved tasks that require competencies and focused collaboration of large firms, SMEs and institutes from several European countries. ENIAC brings all these entities together in a collaborative $4.5 billion research project that will function through the 2009-2013 time period. 

The market for EUV technology, lithography and nanofabrication equipment for the semiconductor, photonic, sensor and MEMS industries is the subject of upcoming report "NANOFABRICATION EQUIPMENT FOR INFORMATION TECHNOLOGY AND ELECTRONICS, A GLOBAL INDUSTRY AND MARKET ANALYSIS"" from Innovative Research and Products Inc.

 




Related Posts Plugin for WordPress, Blogger...