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Samsung Simplifies Single Crystalline Nanowire Processing to Lower Nanofab Costs


Samsung Electronics Co., Ltd. (Gyeonggi-do, KR) Hans S. Cho devised ultrahigh vacuum chemical vapor deposition (UHV-CVD) and laser processes in which nanowires with various diameters (from 1 nm to 100 nm) may be more easily manufactured. Manufacturing cost may be reduced as nano-manufacturing processes are simplified.

Various kinds of substrates for forming nanowires such as crystalline substrates and/or an amorphous substrate may be used in forming single crystalline nanowires such as silicon (Si) nanowire, germanium (Ge) nanowire and  silicon germanium (SiGe) nanowire, according to U.S. Patent 7,642,177

Single crystalline nanowires are formed from larger polycrystalline nanowires. Changing the polycrystalline nanowire to the single crystalline nanowire includes the step of irradiating the polycrystalline nanowire with a laser beam. Removing the insulating layer and the nanowire forming layer may be performed after changing the polycrystalline nanowire to the single crystalline nanowire.

Nanowires may be useful in a variety of fields of lasers, transistors, memory devices and  chemical detecting sensors. Nanowire manufacturing technology may control the length and diameter of a nanowire. For example, the length of a nanowire may be controllable from about five nanometers to about several hundreds of nanometers.

Nanowires may be manufactured by a catalytic growth method. In manufacturing a nanowire using a catalyst after a nanowire is formed in a predetermined or given length, the used catalyst may be removed.

 In the conventional method, it is relatively difficult to completely remove the used catalyst and thus part of the essentially used catalyst may remain as impurities. In the conventional method, because it is relatively difficult to control the growth of a nanowire, it is also relatively difficult to form a nanowire at a predetermined or given position. Samsung’s process overcomes these difficulties.
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